摘要或動機

我們使用陽極氧化鋁(AAO)模板來製備銅及其氧化物的奈米線。以硫酸銅和乳酸配製電鍍液，利用氫氧化鈉水溶液(NaOH)將其pH 值調整到12，供以不同電壓，可電鍍出銅及氧化亞銅奈米線。在較高電壓下可製備出銅奈米線，而在較低電壓下可製成氧化亞銅奈米線，若使用中間電壓則能製得銅及氧化亞銅的混合態。利用x 光繞射分析儀(XRD)來分析其結晶構造、使用場發射掃描式電子顯微鏡(SEM)以得知其表面形貌。電鍍出的奈米線直徑約60 nm。奈米線的長度可藉由調整電鍍時間或電壓來控制。在製作IC 內部導線方面，銅奈米線深具開發潛能；在提升太陽能電池的轉換效率、製作可見光光觸媒方面，氧化亞銅奈米線極具前瞻性。We electrodeposited copper and cuprous oxide (Cu₂O) nanowires with anodic aluminum oxide (AAO) templates. Both Cu and Cu₂O nanowires could be prepared with an alkaline cupric lactate solution, which was adjusted to pH 12 using a 6 M NaOH, when supplied with different electrolytic voltages. Cu nanowires could be prepared when a higher voltage was supplied, and Cu₂O nanowires could be prepared with a lower voltage. A mixture of Cu and Cu₂O nanowires could be prepared with a supply of a voltage in between. X-ray diffraction (XRD) is used to determine the phase composition, and scanning electron microscopy (SEM) is employed to characterize the morphology of the nanowires. The length of nanowires can be controlled by adjusting the time spent on electrodeposition and the voltage supplied. The resultant diameter of the nanowires was about 60 nm. Cu nanowires are promising materials for making the conductive wires in IC, and Cu₂O nanowires hold great promise for improving the conversion efficiency of solar cells and manufacturing visible-light photocatalyst.