摘要或動機

The growth of the internet is propelling an ever-increasing need for faster communication. Modern telecommunication data is mainly carried through fibre-optic cables, with pulses of light representing bits of data; the main factor limiting data transfer speed is the rate at which the optical receiver at the opposite end of the cable can detect light pulses. Graphene-silicon Schottky photodiodes are a promising alternative to traditionally-used germanium photodiodes, promising higher detection frequency and better contrast between light and dark. To make it less susceptible to erroneous measurements due to graphene having a low band gap, hydrogen functionalisation was used to increase the barrier potential of the Schottky diode so that a higher voltage would be required to allow current to pass through in forward voltage bias and trigger the sensor. This study seeks to determine the optimal conditions — of physical proximity, duration of exposure, and plasma power — for hydrogen functionalisation using radio frequency plasma. Graphene was synthesised using low pressure chemical vapour deposition, then transferred onto P-type silicon to create a photodiode. The graphene-silicon photodiode was then doped with hydrogen plasma to introduce defects in the graphene layer to increase the barrier potential of the photodiode. To assess the effectiveness of hydrogen functionalisation, photocurrent measurements were conducted while light was shone onto the photodiode in pulses of increasing frequency to find the magnitude and spontaneity of the response. Light was shone in pulses of 100ms, and was successfully detected by the photodiode. The pulse spacings were gradually decreased and it was found that the diode was able to detect pulse spacings as low as 1µs, significantly better than germanium photodetectors. The sample demonstrated clear optoelectronic response and was sensitive to changes in frequency. Results show that the intensity of the optoelectronic response in graphene-silicon diodes is inversely related to its physical proximity to the plasma source during hydrogen functionalization; and directly related to the power of the plasma and to the duration of exposure up to a point, after which it will deteriorate. Thus, it can be concluded that graphene-silicon Schottky diodes offer much promise in electronic communication.