摘要或動機

DNA感測器近年來蓬勃發展,應用層面包括基因工程,醫學及藥物的開發等,然而目前較常使用的感測方法,需要繁瑣耗時的標定過程,且所使用的化學藥劑對環境容易造成傷害,鑒於以上方法的不完善處,我們決定設計一套新的感測系統,此研究結合了氮化鎵奈米線(GaN Nanowires)及延伸場效電晶體(EGFET)的優點,成功的發展出創新的DNA感測系統,氮化鎵奈米線的高生物匹配性及高感測面積,能有效提高靈敏度,延伸式場效電晶體的設計,史感測器具由免標定及時感測的特性,且易於組裝及操作,我們將探針DNA(probe DNA)修是在氮化鎵奈米線作為之延伸閘極上,由於DNA在中性水溶液中帶負電,且DNA之間具有強烈的互補特性,因此當目標DNA(target DNA)與探針DNA接合,形成雙股DNA,氮化鎵奈米線(閘極)的表面電位即會有所變化,並造成FET特性的改變,藉由此性質及能成功感測DNA,研究結果顯示,此研究所發展出的DNA感測器,愈有相當高的靈敏度(10^-18),相較於其他以FET技術所設計出的DNA感測器,靈敏度提升了三個數量極,此外此感測器亦具有高選擇性,即使單一鹼基對的突變也能成功辨別;-hybridization based detection techniques are widely developed due to their promising applications in genetics, medicine and drug discovery. However, current DNA detection techniques based on labels or reagents are time-consuming, environmentally-harmful and complex to implement. In this study, we have successfully demonstrated a label-free extended-gate-field-effect-transistor (EGFET) sensor utilizing a GaN-nanowires electrode with DNA probes immobilized, capable of specific DNA sequence identification. The principle behind the design is based on the change in surface potential and charge transfer after hybridization. GaN nanowires, being bio-compatible, provide direct transfer path and high surface area, thus offer an unprecedented opportunity of DNA sensing with high sensitivity. In addition, our EGFET design facilitates easy assembly and operation of DNA detection. Comparative studies on complementary and non-complementary DNA were performed to verify the specificity of the sensor. By adapting GaN nanowires structure, the assay time of DNA was shorten to within thirty minutes. Moreover, our sensor displayed an ultra-high sensitivity in the level of attoM: three orders of magnitude higher in resolution than that of other FET-based DNA detection methods.